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IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

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IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

Brand Name : original

Model Number : IS42S16800F-6TL

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Package : Tray

Memory Type : Volatile

Memory Format : DRAM

Memory Size : 128Mbit

Memory Organization : 8M x 16

Memory Interface : Parallel

Clock Frequency : 166 MHz

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IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II​

Specifications of IS42S16800F-6TL

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Memory
Mfr ISSI, Integrated Silicon Solution Inc
Series -
Package Tray
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface Parallel
Clock Frequency 166 MHz
Write Cycle Time - Word, Page -
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Base Product Number IS42S16800


Features of IS42S16800F-6TL


• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply Vdd Vddq
-IS42/45S81600F 3.3V 3.3V
-IS42/45S16800F 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Temperature Ranges:
-Commercial (0o C to +70o C)
-Industrial (-40o C to +85o C)
-Automotive, A1 (-40o C to +85o C)
-Automotive, A2 (-40o C to +105o C)

Descriptions of IS42S16800F-6TL


The 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 134,217,728 bits.


Environmental & Export Classifications of IS42S16800F-6TL

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0002


IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II


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IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II Images

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